Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

摘要

Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAsquantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAsinsertion barrier, the thermal current is effectively reduced and electronresonant tunneling through quantum dots under both forward and reverse biasedconditions is observed at relatively high temperature of 77K. The ground statesof quantum dots are found to be at ~0.19eV below the conduction band of GaAsmatrix. The theoretical computations are in conformity with experimental data.